Surface Polar Phonon Dominated Electron Transport in Graphene

نویسندگان

  • X. Li
  • E. A. Barry
  • J. M. Zavada
  • M. Buongiorno Nardelli
  • K. W. Kim
چکیده

The effects of surface polar phonons on electronic transport properties of monolayer graphene are studied by using a Monte Carlo simulation. Specifically, the low-field electron mobility and saturation velocity are examined for different substrates (SiC, SiO2, and HfO2) in comparison to the intrinsic case. While the results show that the low-field mobility can be substantially reduced by the introduction of surface polar phonon scattering, corresponding degradation of the saturation velocity is not observed for all three substrates at room temperature. It is also found that surface polar phonons can influence graphene electrical resistivity even at low temperature, leading potentially to inaccurate estimation of the acoustic phonon deformation potential constant. PACS numbers: 72.80.Vp,72.10.Di,72.20.Ht,73.50.Dn

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Charge transfer equilibria in ambient-exposed epitaxial graphene on (000) 6H-SiC

Related Articles Directional quantum transport in graphyne p-n junction J. Appl. Phys. 113, 073710 (2013) Charge transport in lightly reduced graphene oxide: A transport energy perspective J. Appl. Phys. 113, 063710 (2013) Effect of chiral property on hot phonon distribution and energy loss rate due to surface polar phonons in a bilayer graphene J. Appl. Phys. 113, 063705 (2013) Annealing effec...

متن کامل

Inelastic scattering and current saturation in graphene

We present a study of transport in graphene devices on polar insulating substrates by solving the Boltzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of the saturated velocity shows very weak dependence on the carrier density, the nature of the insulating substrate, and the low-field mobility, varied by the ch...

متن کامل

Effect of high- gate dielectrics on charge transport in graphene-based field effect transistors

The effect of various dielectrics on charge mobility in single-layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity scattering, a comprehensive picture of the effect of dielectrics on charge transport in graphene emerges. It is found that though highdielectrics can strongly...

متن کامل

Cooling of photoexcited carriers in graphene by internal and substrate phonons

We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using theBoltzmann equation approach.Wefind that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculat...

متن کامل

Effects of optical and surface polar phonons on the optical conductivity of doped graphene

Using the Kubo linear response formalism, we study the effects of intrinsic graphene optical and surface polar phonons (SPPs) on the optical conductivity of doped graphene. We find that inelastic electron-phonon scattering contributes significantly to the phonon-assisted absorption in the optical gap. At room temperature, this midgap absorption can be as large as 20–25% of the universal ac cond...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2010